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Application of Chlorine-Assisted Chemical Vapor Deposition of Diamond at Low TemperaturesLow temperature deposition of diamond has been achieved by a chlorine-assisted diamond chemical vapor deposition (CA-CVD) process. This method begins with the thermal dissociation of molecular chlorine into atomic chlorine in a resistively heated graphite furnace at temperatures between 1300 and 1500 deg. C. The atomic chlorine, upon mixing, subsequently reacts with molecular hydrogen and hydrocarbons. The rapid exchange reactions between the atomic chlorine, molecular hydrogen, and hydrocarbons give rise to the atomic hydrogen and carbon precursors required for diamond deposition. Homoepitaxial diamond growth on diamond substrates has been studied over the substrate temperature range of 100-950 C. It was found that the diamond growth rates are approximately 0.2 microns/hr in the temperature range between 102 and 300 C and that the growth rates do not decrease significantly with a decrease in substrate temperature. This is unique because the traditional diamond deposition using H2/CH4 systems usually disappears at substrate temperatures below approx. 500 deg. C. This opens up a possible route to the deposition of diamond on low-melting point materials such as aluminum and its alloys.
Document ID
19960021780
Document Type
Conference Paper
Authors
Pan, Chenyu
(Rice Univ. Houston, TX United States)
Altemir, David A.
(NASA Johnson Space Center Houston, TX United States)
Margrave, John L.
(Rice Univ. Houston, TX United States)
Hauge, Robert H.
(Rice Univ. Houston, TX United States)
Date Acquired
August 17, 2013
Publication Date
May 1, 1994
Publication Information
Publication: Dual-Use Space Technology Transfer Conference and Exhibition
Volume: 1
Subject Category
Nonmetallic Materials
Accession Number
96N25055
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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