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Very Long Wavelength In(x)Ga(1-x)As/GaAs Quantum Well Infrared PhotodetectorsWe demonstrate a long wavelength (lambda(sub c)=20 microns) quantum well infrared photodetector using nonlattice matched In(x),Ga(l-x)As/GaAs materials system. High optical gains (low capture probabilities) were achieved by using GaAs as a barrier material in this system. A detectivity of D*=9.7 x 10(exp 10) cm square root of Hz/W at T= 10 K has been achieved.
Document ID
19970012383
Acquisition Source
Jet Propulsion Laboratory
Document Type
Reprint (Version printed in journal)
External Source(s)
doi:10.1063/1.111646
Authors
Gunapala, S. D. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA United States)
Bandara, K. M. S. V. (Bell Telephone Labs., Inc. Murray Hill, NJ United States)
Levine, B. F. (Bell Telephone Labs., Inc. Murray Hill, NJ United States)
Sarusi, G. (Bell Telephone Labs., Inc. Murray Hill, NJ United States)
Sivco, D. L. (Bell Telephone Labs., Inc. Murray Hill, NJ United States)
Cho, A. Y. (Bell Telephone Labs., Inc. Murray Hill, NJ United States)
Date Acquired
August 17, 2013
Publication Date
April 25, 1994
Publication Information
Publication: Applied Physics Letters
Publisher: American Inst. of Physics
Volume: 64
Issue: 17
ISSN: 0003-6951
Subject Category
Thermodynamics And Statistical Physics
Report/Patent Number
NAS 1.26:203355
NASA-CR-203355
ISSN: 0003-6951
Report Number: NAS 1.26:203355
Report Number: NASA-CR-203355
Accession Number
97N70975
Distribution Limits
Public
Copyright
Public Use Permitted.
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