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Semiconductor Laser Low Frequency Noise CharacterizationThis work summarizes the efforts in identifying the fundamental noise limit in semiconductor optical sources (lasers) to determine the source of 1/F noise and it's associated behavior. In addition, the study also addresses the effects of this 1/F noise on RF phased arrays. The study showed that the 1/F noise in semiconductor lasers has an ultimate physical limit based upon similar factors to fundamental noise generated in other semiconductor and solid state devices. The study also showed that both additive and multiplicative noise can be a significant detriment to the performance of RF phased arrays especially in regard to very low sidelobe performance and ultimate beam steering accuracy. The final result is that a noise power related term must be included in a complete analysis of the noise spectrum of any semiconductor device including semiconductor lasers.
Document ID
19970022863
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Maleki, Lute
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA United States)
Logan, Ronald T.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA United States)
Date Acquired
September 6, 2013
Publication Date
December 1, 1996
Subject Category
Lasers And Masers
Report/Patent Number
AD-A321856
RL-TR-96-203
NAS 1.26:205047
NASA-CR-205047
Report Number: AD-A321856
Report Number: RL-TR-96-203
Report Number: NAS 1.26:205047
Report Number: NASA-CR-205047
Accession Number
97N23282
Funding Number(s)
PROJECT: AF Proj. 2863
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Keywords
SEMICONDUCTOR LASERS
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