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Low-Energy Sputtering Studies of Boron Nitride with Xenon IonsSputtering of boron nitride with xenon ions was investigated using secondary ion (SIMS) and secondary neutral (SNMS) mass spectrometry. The ions generated from the ion gun were incident on the target at an angle of 50' with respect to the surface'normal. The energy of ions ranged from 100 eV to 3 keV. A flood electron gun was used to neutralize the positive charge build-up on the target surface. The intensities of sputtered neutral and charged particles, including single atoms, molecules, and clusters, were measured as a function of ion energy. Positive SIMS spectra were dominated by the two boron isotopes whereas BN- and B- were the two major constituents of the negative SIMS spectra. Nitrogen could be detected only in the SNMS spectra. The intensity-energy curves of the sputtered particles were similar in shape. The knees in P-SIMS and SNMS intensity-energy curves appear at around I keV which is significantly higher that 100 to 200 eV energy range at which knees appear in the sputtering of medium and heavy elements by ions of argon and xenon. This difference in the position of the sputter yield knee between boron nitride and heavier targets is due to the reduced ion energy differences. The isotopic composition of secondary ions of boron were measured by bombarding boron nitride with xenon ions at energies ranging from 100 eV to 1.5 keV using a quadrupole mass spectrometer. An ion gun was used to generate the ion beam. A flood electron gun was used to neutralize the positive charge buildup on the target surface. The secondary ion flux was found to be enriched in heavy isotopes at lower incident ion energies. The heavy isotope enrichment was observed to decrease with increasing primary ion energy. Beyond 350 eV, light isotopes were sputtered preferentially with the enrichment increasing to an asymptotic value of 1.27 at 1.5 keV. The trend is similar to that of the isotopic enrichment observed earlier when copper was sputtered with xenon ions in the same energy range.
Document ID
19990024989
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Ray, P. K.
(Tuskegee Inst. AL United States)
Shutthanandan, V.
(Tuskegee Inst. AL United States)
Date Acquired
September 6, 2013
Publication Date
January 1, 1999
Subject Category
Atomic And Molecular Physics
Report/Patent Number
NAS 1.26:208873
E-11521
NASA/CR-1999-208873
Report Number: NAS 1.26:208873
Report Number: E-11521
Report Number: NASA/CR-1999-208873
Funding Number(s)
PROJECT: RTOP 632-1B-1B
CONTRACT_GRANT: NAG3-1582
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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