NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Cryogenic High Pressure Sensor ModuleA pressure sensor is provided for cryogenic, high pressure applications. A highly doped silicon piezoresistive pressure sensor is bonded to a silicon substrate in an absolute pressure sensing configuration. The absolute pressure sensor is bonded to an aluminum nitride substrate. Aluminum nitride has appropriate coefficient of thermal expansion for use with highly doped silicon at cryogenic temperatures. A group of sensors, either two sensors on two substrates or four sensors on a single substrate are packaged in a pressure vessel.
Document ID
19990106558
Acquisition Source
Langley Research Center
Document Type
Other - Patent
Authors
Chapman, John J.
(NASA Langley Research Center Hampton, VA United States)
Shams, Qamar A.
(NASA Langley Research Center Hampton, VA United States)
Powers, William T.
(NASA Langley Research Center Hampton, VA United States)
Date Acquired
August 19, 2013
Publication Date
September 21, 1999
Subject Category
Instrumentation And Photography
Report/Patent Number
Patent Number: US-Patent-5,955,678
Patent Application Number: US-Patent-Appl-SN-778065
Patent Application Number: US-Patent-Appl-SN-992972
Patent Number: NASA-Case-LAR-15280-3-SB
Patent Application Number: US-Patent-Appl-SN-681245
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-Patent-5,955,678|NASA-Case-LAR-15280-3-SB
Patent Application
US-Patent-Appl-SN-778065|US-Patent-Appl-SN-992972|US-Patent-Appl-SN-681245
No Preview Available