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Temperature Dependence of Diffusion and Reaction at a Pd/SiC ContactSchottky diodes of Palladium/SiC are good candidates for hydrogen and hydrocarbon gas sensors at elevated temperature. The detection sensibility of the diodes has been found heavily temperature dependent. In this work, emphasis has been put on the understanding of changes of physical and chemical properties of the Schottky diodes with variation of temperature. Schottky diodes were made by depositing ultra-thin palladium films onto silicon carbide substrates. The electrical and chemical properties of Pd/SiC Schottky contacts were studied by XPS and AES at different annealing temperatures. No significant change in the Schottky barrier height of the Pd/SiC contact was found in the temperature range of RT-400 C. However, both palladium diffused into SiC and silicon migrated into palladium thin film as well as onto surface were observed at room temperature. The formation of palladium compounds at the Pd/SiC interface was also observed. Both diffusion and reaction at the Pd/SiC interface became significant at 300 C and higher temperature. In addition, silicon oxide was found also at the interface of the Pd/SiC contact at high temperature. In this report, the mechanism of diffusion and reaction at the Pd/SiC interface will be discussed along with experimental approaches.
Document ID
20000032252
Acquisition Source
Headquarters
Document Type
Conference Paper
Authors
Shi, D.T.
(Fisk Univ. Nashville, TN United States)
Lu, W. J.
(Fisk Univ. Nashville, TN United States)
Bryant, E.
(Fisk Univ. Nashville, TN United States)
Elshot, K.
(Fisk Univ. Nashville, TN United States)
Lafate, K.
(Fisk Univ. Nashville, TN United States)
Chen, H.
(Fisk Univ. Nashville, TN United States)
Burger, A.
(Fisk Univ. Nashville, TN United States)
Collins, W. E.
(Fisk Univ. Nashville, TN United States)
Date Acquired
August 19, 2013
Publication Date
February 22, 1998
Publication Information
Publication: NASA University Research Centers Technical Advances in Aeronautics, Space Sciences and Technology, Earth Systems Sciences, Global Hydrology, and Education
Volume: 2 and 3
Subject Category
Electronics And Electrical Engineering
Funding Number(s)
CONTRACT_GRANT: NAG3-2012
CONTRACT_GRANT: NAGW-2925
CONTRACT_GRANT: NAG3-1430
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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