Very High Current Density Nb/AlN/Nb Tunnel Junctions for Low-Noise Submillimeter Mixers

We have fabricated and tested submillimeter-wave superconductor-insulator-superconductor (SIS) mixers using very high current density Nb/AlN/Nb tunnel junctions (J(sub c) approximately equal 30 kA/sq cm) . The junctions have low resistance-area products (R(sub N)A approximately 5.6 Omega.sq micron), good subgap to normal resistance ratios R(sub sg)/R(sub N) approximately equal 10, and good run-to-run reproducibility. From Fourier transform spectrometer measurements, we infer that omega.R(sub N)C = 1 at 270 GHz. This is a factor of 2.5 improvement over what is generally available with Nb/AlO(x)/Nb junctions suitable for low-noise mixers. The AlN-barrier junctions are indeed capable of low-noise operation: we measure an uncorrected receiver noise temperature of T(sub RX) = 110 K (DSB) at 533 GHz for an unoptimized device. In addition to providing wider bandwidth operation at lower frequencies, the AlN-barrier junctions will considerably improve the performance of THz SIS mixers by reducing RF loss in the tuning circuits.