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Gas Sensing Diode and Method of ManufacturingA diode for sensing hydrogen and hydrocarbons and the process for manufacturing the diode are disclosed. The diode is a Schottky diode which has a palladium chrome contact on the C-face of an n-type 6H Silicon carbide epilayer. The epilayer is grown on the C-face of a 6H silicon carbide substrate. The diode is capable of measuring low concentrations of hydrogen and hydrocarbons at high temperatures, for example, 800 C. The diode is both sensitive and stable at elevated temperatures.
Document ID
20000046791
Acquisition Source
Legacy CDMS
Document Type
Other - Patent
Authors
Hunter, Gary William (NASA Lewis Research Center Cleveland, OH United States)
Date Acquired
September 7, 2013
Publication Date
February 22, 2000
Subject Category
Instrumentation And Photography
Report/Patent Number
Patent Number: NASA-Case-LEW-16519-1
Patent Application Number: US-Patent-Appl-SN-093840
Patent Number: US-Patent-6,027,954
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
NASA-Case-LEW-16519-1|US-Patent-6,027,954
Patent Application
US-Patent-Appl-SN-093840

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