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High Frequency Interconnects on Silicon SubstratesThe measured propagation constant of coplanar waveguide (CPW) on silicon wafers as a function of the line dimensions and the resistivity of the Si wafer; CPW on GaAs wafers as a function of the line dimensions, and thin film microstrip (TFMS) polyimide fabricated with polyimide on the surface of a silicon wafer is presented. It is shown that the attenuation of CPW on 2500 Omega-cm Si wafers and-of TFMS with a polyimide thickness of 4 micrometer or greater is comparable to the attenuation of similar lines on GaAs.
Document ID
20000057565
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Ponchak, George E.
(NASA Lewis Research Center Cleveland, OH United States)
Downey, Alan N.
(NASA Lewis Research Center Cleveland, OH United States)
Katehi, Linda P. B.
(Michigan Univ. Ann Arbor, MI United States)
Date Acquired
August 19, 2013
Publication Date
January 1, 1997
Publication Information
Publication: 1997 IEEE Radio Frequency Integrated Circuits Symposium
ISBN: 0-7803-4603-9
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: Radio Frequency Integrated Circuits
Location: Denver, CO
Country: United States
Start Date: June 8, 1997
End Date: June 11, 1997
Sponsors: Institute of Electrical and Electronics Engineers
Funding Number(s)
PROJECT: RTOP 632-6E-51
Distribution Limits
Public
Copyright
Other

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