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Ultrafast Modulation of Semiconductor Lasers Through a Terahertz FieldWe demonstrate, by means of numerical simulation, a new mechanism to modulate and switch semiconductor lasers at THz and sub-THz frequency rates. A sinusoidal terahertz field applied to a semiconductor laser heats the electron-hole plasma and consequently modifies the optical susceptibility. This allows an almost linear modulation of the output power of tile semiconductor laser and leads to a faithful reproduction of the terahertz-field waveform in the emitted laser intensity.
Document ID
20000070451
Acquisition Source
Ames Research Center
Document Type
Preprint (Draft being sent to journal)
Authors
Ning, Cun-Zheng
(NASA Ames Research Center Moffett Field, CA United States)
Hughes, Steven
(Washington State Univ. Pullman, WA United States)
Citrin, David
(Washington State Univ. Pullman, WA United States)
Date Acquired
September 7, 2013
Publication Date
January 1, 1998
Subject Category
Lasers And Masers
Funding Number(s)
CONTRACT_GRANT: NAS2-14303
OTHER: NSF DMR-97-05403
PROJECT: RTOP 519-40-12
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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