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Apparatus For Linewidth Reduction in Distributed Feedback or Distributed Bragg Reflector Semiconductor Lasers Using Vertical EmissionThe linewidth of a distributed feedback semiconductor laser or a distributed Bragg reflector laser having one or more second order gratings is reduced by using an external cavity to couple the vertical emission back into the laser. This method and device prevent disturbance of the main laser beam, provide unobstructed access to laser emission for the formation of the external cavity, and do not require a very narrow heat sink. Any distributed Bragg reflector semiconductor laser or distributed feedback semiconductor laser that can produce a vertical emission through the epitaxial material and through a window in the top metallization can be used. The external cavity can be formed with an optical fiber or with a lens and a mirror or grating.
Document ID
20000091029
Acquisition Source
Langley Research Center
Document Type
Other - Patent
Authors
Cook, Anthony L.
(NASA Langley Research Center Hampton, VA United States)
Hendricks, Herbert D.
(NASA Langley Research Center Hampton, VA United States)
Date Acquired
September 7, 2013
Publication Date
June 13, 2000
Subject Category
Lasers And Masers
Report/Patent Number
Patent Application Number: US-Patent-Appl-SN-179731
Patent Application Number: US-Patent-Appl-SN-549347
Patent Number: NASA-Case-LAR-15258-2
Patent Number: US-Patent-6,075,805
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
NASA-Case-LAR-15258-2|US-Patent-6,075,805
Patent Application
US-Patent-Appl-SN-179731|US-Patent-Appl-SN-549347
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