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'Atomistic' Simulation of Decanano DevicesWhen the devices are scaled to decanano dimensions the discreteness of charge and matter introduces significant 'intrinsic' parameter fluctuations. Atomic level 3D process and device modelling on statistical scale is required to understand the effects, the scale of the fluctuations and to design fluctuation resistant devices.
Document ID
20010006025
Acquisition Source
Ames Research Center
Document Type
Conference Paper
Authors
Asenov, Asen (Glasgow Univ. United Kingdom)
Brown, A. R. (Glasgow Univ. United Kingdom)
Davies, J. H. (Glasgow Univ. United Kingdom)
Kaya, S. (Glasgow Univ. United Kingdom)
Slavcheva, G. (Glasgow Univ. United Kingdom)
Saini, Subhash (NASA Ames Research Center Moffett Field, CA United States)
Date Acquired
September 7, 2013
Publication Date
January 1, 2000
Publication Information
Publication: Repr. from Parallel Finite Element Simulation of 'Atomistic' Effects in Sub-0.1 micron Devices, 2000
Subject Category
Instrumentation And Photography
Meeting Information
Meeting: CHIPPS 2000
Country: United States
Start Date: January 1, 2000
Funding Number(s)
CONTRACT_GRANT: NAG2-1241
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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