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Gas Sensing Diode Comprising SiCA diode for sensing hydrogen and hydrocarbons and the process for manufacturing the diode are disclosed. The diode is a Schottky diode which has a palladium chrome contact on the C-face of an n-type 6H Silicon carbide epilayer. The epilayer is grown on the C-face of a 6H silicon carbide substrate. The diode is capable of measuring low concentrations of hydrogen and hydrocarbons at high temperatures, for example, 800 degrees C. The diode is both sensitive and stable at elevated temperatures.
Document ID
20010096172
Acquisition Source
Glenn Research Center
Document Type
Other - Patent
Authors
Hunter, Gary William (NASA Glenn Research Center Cleveland, OH United States)
Date Acquired
September 7, 2013
Publication Date
September 18, 2001
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
Patent Number: US-Patent-6,291,838
Patent Application Number: US-Patent-Appl-SN-448406
Patent Application Number: US-Patent-Appl-SN-093840
Patent Number: NASA-Case-LEW-16519-2
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-Patent-6,291,838|NASA-Case-LEW-16519-2
Patent Application
US-Patent-Appl-SN-448406|US-Patent-Appl-SN-093840

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