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Temperature Effects in Varactors and MultipliersVaractor diode multipliers are a critical part of many THz measurement systems. The power and efficiencies of these devices limit the available power for THz sources. Varactor operation is determined by the physics of the varactor device and a careful doping profile design is needed to optimize the performance. Higher doped devices are limited by junction breakdown and lower doped structures are limited by current saturation. Higher doped structures typically have higher efficiencies and lower doped structures typically have higher powers at the same operating frequency and impedance level. However, the device material properties are also a function of the operating temperature. Recent experimental evidence has shown that the power output of a multiplier can be improved by cooling the device. We have used a particle Monte Carlo simulation to investigate the temperature dependent velocity vs. electric field in GaAs. This information was then included in a nonlinear device circuit simulator to predict multiplier performance for various temperatures and device designs. This paper will describe the results of this analysis of temperature dependent multiplier operation.
Document ID
20020038963
Document Type
Conference Paper
Authors
East, J.
(Michigan Univ. United States)
Mehdi, Imran
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA United States)
Date Acquired
August 20, 2013
Publication Date
December 1, 2001
Publication Information
Publication: Proceedings of the Twelfth International Symposium on Space Terahertz Technology
Subject Category
Electronics And Electrical Engineering
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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IDRelationTitle20020038920Analytic PrimaryProceedings of the Twelfth International Symposium on Space Terahertz Technology
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