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Design Considerations for Heavily-Doped Cryogenic Schottky Diode Varactor MultipliersDiode modeling for Schottky varactor frequency multipliers above 500 GHz is presented with special emphasis placed on simple models and fitted equations for rapid circuit design. Temperature- and doping-dependent mobility, resistivity, and avalanche current multiplication and breakdown are presented. Next is a discussion of static junction current, including the effects of tunneling as well as thermionic emission. These results have been compared to detailed measurements made down to 80 K on diodes fabricated at JPL, followed by a discussion of the effect on multiplier efficiency. Finally, a simple model of current saturation in the undepleted active layer suitable for inclusion in harmonic balance simulators is derived.
Document ID
20020038979
Document Type
Conference Paper
Authors
Schlecht, E.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA United States)
Maiwald, F.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA United States)
Chattopadhyay, G.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA United States)
Martin, S.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA United States)
Mehdi, I.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA United States)
Date Acquired
August 20, 2013
Publication Date
December 1, 2001
Publication Information
Publication: Proceedings of the Twenlfth International Symposium on Space Terahertz Technology
Subject Category
Electronics And Electrical Engineering
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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