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Implementation of Self-Align Local Poly Interconnection on 0.25 Micron Flash MemoryFor ETOX Flash technology. the self-aligned source module plays a critical role in minimizing cell size. For advanced Flash technology using the shallow-trench isolation (STI) scheme, however, it is difficult to form a stable source line. The Flash process in this experiment features an ETOX structure and with SIN spacer. Poly-Si (implanted poly) is used as the local interconnection material connecting the source line and was successfully implemented in the ETOX flash array in this paper.
Document ID
20020043698
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
Authors
C H Lee (United Microelectronic Corporation Hsinchu, Taiwan, Province of China)
C H Lin (United Microelectronic Corporation Hsinchu, Taiwan, Province of China)
H H Chen (United Microelectronic Corporation Hsinchu, Taiwan, Province of China)
Y K Sheu (United Microelectronic Corporation Hsinchu, Taiwan, Province of China)
WenChi Ting (United Microelectronic Corporation Hsinchu, Taiwan, Province of China)
Gary Hong (United Microelectronic Corporation Hsinchu, Taiwan, Province of China)
Date Acquired
August 20, 2013
Publication Date
November 1, 2000
Publication Information
Publication: Non-Volatile Memory Technology Symposium 2000: Proceedings
Publisher: Jet Propulsion Laboratory
Subject Category
Electronics and Electrical Engineering
Report/Patent Number
JPL-Publ-00-15
Meeting Information
Meeting: Non-Volatile Memory Technology Symposium 2000
Location: Arlington, VA
Country: US
Start Date: November 15, 2000
End Date: November 16, 2000
Sponsors: Jet Propulsion Laboratory
Distribution Limits
Public
Copyright
Portions of document may include copyright protected material.
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