A 0.25 Micron Embedded Flash Technology with Shallow Trench Isolation Using Channel FN Operation

A new 0.25 micron flash EEPROM developed for embedded applications will be reported. Flash memory is achieved by utilizing a single transistor NOR type cell that employs Fowler-Nordheim tunneling for both program and erase operations. Channel FN tunneling is a high efficiency and low power consumption approach for flash cell operation. The flash EEPROM is integrated into a standard quarter micron logic process with dual gate oxide for high performance and high voltage transistors. Program and erase could be achieved within 5 ms to target. The high performance logic devices didn't be degraded by incorporated with flash process was demonstrated.