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Total Dose Radiation Response and High Temperature Imprint Characteristics of Chalcogenide Memory ElementsThis videograph presents the applicable aspects of C-RAM memory element radiation testing. These aspects include: (1) Motivation; (2) Chalcogenide Technology Primer; (3) Temperature and Total Dose Testing Methodology; (4) Test Results and Discussion; and (5) Conclusions.
Document ID
20020043706
Acquisition Source
Jet Propulsion Laboratory
Document Type
Presentation
Authors
Steve Bernacki (Raytheon (United States) Waltham, United States)
Ken Hunt (United States Air Force Research Laboratory Wright-Patterson AFB, United States)
Scott Tyson (United States Air Force Research Laboratory Wright-Patterson AFB, United States)
Hudgens, Steve (Ovonyx Troy, MI United States)
Boil Pashmakov (Ovonyx Troy, MI United States)
Wally Czubatly (Ovonyx Troy, MI United States)
Date Acquired
August 20, 2013
Publication Date
November 1, 2000
Publication Information
Publication: Non-Volatile Memory Technology Symposium 2000: Proceedings
Publisher: Jet Propulsion Laboratory
Subject Category
Electronics and Electrical Engineering
Report/Patent Number
JPL-Publ-00-15
Meeting Information
Meeting: Non-Volatile Memory Technology Symposium 2000
Location: Arlington, VA
Country: US
Start Date: November 15, 2000
End Date: November 16, 2000
Sponsors: Jet Propulsion Laboratory
Distribution Limits
Public
Copyright
Public Use Permitted.
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IDRelationTitle20020043697Collected WorksNon-Volatile Memory Technology Symposium 2000
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