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Quantitative Analysis of Charge Injection and Discharging of Si Nanocrystals and Arrays by Electrostatic Force MicroscopyNASA requirements for computing and memory for microspacecraft emphasize high density, low power, small size, and radiation hardness. The distributed nature of storage elements in nanocrystal floating-gate memories leads to intrinsic fault tolerance and radiation hardness. Conventional floating-gate non-volatile memories are more susceptible to radiation damage. Nanocrystal-based memories also offer the possibility of faster, lower power operation. In the pursuit of filling these requirements, the following tasks have been accomplished: (1) Si nanocrystal charging has been accomplished with conducting-tip AFM; (2) Both individual nanocrystals on an oxide surface and nanocrystals formed by implantation have been charged; (3) Discharging is consistent with tunneling through a field-lowered oxide barrier; (4) Modeling of the response of the AFM to trapped charge has allowed estimation of the quantity of trapped charge; and (5) Initial attempts to fabricate competitive nanocrystal non-volatile memories have been extremely successful.
Document ID
20020043713
Acquisition Source
Headquarters
Document Type
Conference Paper
Authors
Bell, L. D.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA United States)
Boer, E.
(California Inst. of Tech. Pasadena, CA United States)
Ostraat, M.
(California Inst. of Tech. Pasadena, CA United States)
Brongersma, M. L.
(California Inst. of Tech. Pasadena, CA United States)
Flagan, R. C.
(California Inst. of Tech. Pasadena, CA United States)
Atwater, H. A.
(California Inst. of Tech. Pasadena, CA United States)
Date Acquired
August 20, 2013
Publication Date
November 1, 2000
Publication Information
Publication: Non-Volatile Memory Technology Symposium 2000: Proceedings
Subject Category
Solid-State Physics
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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