Advances in FeRAM Technologies

Commercial ferroelectric random access memories (FeRAMs) are emerging into the marketplace. Reliability levels have been measured to be comparable to or better than those of other reprogrammable nonvolatile semiconductor technologies. Both SBT and PZT ferroelectric materials have been used in these memories for the memory storage elements. By combining ferroelectric memory technology with radiation hardened CMOS technology. nonvolatile semiconductor memories for space applications can be attained. These memories have high endurance. fast write times and low power performance. While significant efforts are underway at major semiconductor manufacturers worldwide to develop ferroelectric memory businesses, funding limitations must be overcome to allow the development of radiation hardened ferroelectric memories for space applications.