NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Press Enter or click the Search button to begin your search.

Back to Results
Substrate Effects on Electronic Properties of Atomic ChainsWhen the device size is reduced down to 0.07 micrometers, the number of dopant atoms in the channel will no longer be macroscopic, typically less than a hundred. A spatial distribution of these dopant atoms will fluctuate statistically from device to device even in identically designed devices, and this places a serious limitation for integration. It is, however, impractical to control dopant positions within atomic dimension. One fundamental solution to this problem is to create electronics with atomically precise, but preferably simple structures. Atomic chains, precise structures of adatoms created on an atomically regulated surface, are candidates for constituent components in future electronics. All the adatoms will be placed at designated positions on the substrate, and all the device structures will be precise, free from any deviations. It was predicted using the tight-binding calculation with universal parameters that silicon chains were metallic and magnesium chains were semiconducting regardless of the lattice spacing, and a possible doping method was also proposed. In these treatments, the substrate was assumed to serve as a non-interacting template holding the adatoms without a formation of chemical bonding with substrate atoms. However, this scheme may not be easy to implement experimentally. Adatoms will have to be fixed with a van der Waals force on the substrate, but the force is generally weak and an extremely low temperature environment has to be prepared to suppress their unwanted thermal displacement. It may be logical to seek a scheme to allow the adatoms to form chemical bonding with the substrate atoms and secure their positions. The substrate effects are studied in detail.
Document ID
20020069129
Acquisition Source
Ames Research Center
Document Type
Preprint (Draft being sent to journal)
Authors
Yamada, Toshishige
(MRJ Technology Solutions, Inc. Moffett Field, CA United States)
Saini, Subhash
Date Acquired
September 7, 2013
Publication Date
January 1, 1998
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: 1998 Foresight Conference
Location: Santa Clara, CA
Country: United States
Start Date: November 12, 1998
End Date: November 15, 1998
Funding Number(s)
PROJECT: RTOP 519-40-12
CONTRACT_GRANT: NAS2-14303
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
No Preview Available