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Thermophysical Properties of Te-based II-VI Semiconductors: Reduced Algorithms for Thermal Diffusivity DeterminationThis paper presents methodologies for measuring the thermal diffusivity using the difference between temperatures measured at two, essentially independent, locations. A heat pulse is applied for an arbitrary time to one region of the sample; either the inner core or the outer wall. Temperature changes are then monitored versus time. The thermal diffusivity is calculated from the temperature difference versus time. No initial conditions are used directly in the final results.
Document ID
20030060496
Acquisition Source
Marshall Space Flight Center
Document Type
Conference Paper
Authors
Banish, R. Michael
(Alabama Univ. Huntsville, AL, United States)
Brantschen, Segolene
(Alabama Univ. Huntsville, AL, United States)
Pourpoint, Timothee L.
(Alabama Univ. Huntsville, AL, United States)
Wessling, Francis
(Alabama Univ. Huntsville, AL, United States)
Sekerka, Robert F.
(Carnegie-Mellon Univ. Pittsburgh, PA, United States)
Date Acquired
September 7, 2013
Publication Date
February 1, 2003
Publication Information
Publication: 2002 Microgravity Materials Science Conference
Subject Category
Solid-State Physics
Funding Number(s)
CONTRACT_GRANT: NAG8-1476
CONTRACT_GRANT: NAG8-1704
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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