Achievement of 1014[1/cm2] Surface Hole Carrier Density on Diamond Film by the Sulfur Hexafluride Incorporated Hydrogen Plasma Post-Treatment

This paper deals with manipulation of the surface hole areal density of diamond films by a new treatment method. Our proposal is characterized by a post-treatment of as-grown diamond film surface in (H2+SF6) microwave plasma, where SF6 incorporation was around 0.06 % or less. With increasing the treatment time up to 4 min, the surface resistivity changed from 5 x 105 [ / ] down to 4 x 102 [ / ] and, on the other hand, hole areal density increased from 2 x 1013 to 1 - 2 x 1014 [1/cm2]. In addition, these values did not affected at all by the measurement atmospheres. With further increase in the treating-time, however, those electrical properties began to degrade. As to the role of (H2+SF6) plasma treatment of diamond film surface, a charge transfer model was given for explanation from chemiphysical point of view.