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Microwave Power Performance of Diamond Surface-Channel FETS Using High-Quality Homoepitaxial LayersHigh-quality homoepitaxial diamond layers were used to fabricate surface-channel short-gate FETs. RF measurements of FETs with 0.2-μ-long gate yielded fT of 20 GHz, fmaxMAG of 50 GHz, fmaxU of 58 GHz. FETs with 0.4-μ-long gate exhibited a maximum output power level (Pout) at 1 GHz of 0.35 W/mm.
Document ID
20030068547
Acquisition Source
Glenn Research Center
Document Type
Conference Paper
Authors
M Kasu (Universität Ulm Ulm, Germany)
M Kubovic (Universität Ulm Ulm, Germany)
A Aleksov (Universität Ulm Ulm, Germany)
I Kallfass (Universität Ulm Ulm, Germany)
U Spitzberg (Universität Ulm Ulm, Germany)
N Kobayashi (Nippon Telegraph and Telephone Public Corp. Atsugi, Japan)
T Makimoto (Nippon Telegraph and Telephone Public Corp. Atsugi, Japan)
H Schumacher (Universität Ulm Ulm, Germany)
E Kohn (Universität Ulm Ulm, Germany)
Date Acquired
August 21, 2013
Publication Date
August 1, 2003
Publication Information
Publication: Proceedings of the Seventh Applied Diamond Conference/Third Frontier Carbon Technology Joint Conference
Publisher: National Aeronautics and Space Administration
Subject Category
Electronics and Electrical Engineering
Report/Patent Number
NASA/CP-2003-212319
Meeting Information
Meeting: 3rd Frontier Carbon Technology (FCT) Joint Conference
Location: Tsukuba
Country: JP
Start Date: August 18, 2003
End Date: August 21, 2003
Sponsors: Nippon Institute of Technology, National Institute of Advanced Industrial Science and Technology, Glenn Research Center
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Keywords
H-termination
FET
CVD
homoepitaxial layer
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IDRelationTitle20030068525Collected WorksProceedings of the Seventh Applied Diamond Conference/Third Frontier Carbon Technology Joint Conference (ADC/FCT 2003)
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