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Formation of Flat Polycrystalline Diamond Surface by Ion Beam EtchingCVD polycrystalline diamond thin film was etched by Ar ion beam in order to form flat diamond surface. Beam incident angle and etching time were used as parameters. The etched surface was characterized by SEM and by 3-D morphological measurement system. It was found although the etching time of 50h was needed, the relatively flat surface was obtained.
Document ID
20030068551
Acquisition Source
Glenn Research Center
Document Type
Conference Paper
Authors
Takatoshi Yamada (Tohoku University Sendai, Japan)
Atsuhito Sawabe (Aoyama Gakuin University Tokyo, Japan)
Date Acquired
August 21, 2013
Publication Date
August 1, 2003
Publication Information
Publication: Proceedings of the Seventh Applied Diamond Conference/Third Frontier Carbon Technology Joint Conference
Publisher: National Aeronautics and Space Administration
Subject Category
Nonmetallic Materials
Report/Patent Number
NASA/CP-2003-212319
Meeting Information
Meeting: 7th Applied Diamond Conference (ADC)
Location: Tsukuba
Country: JP
Start Date: August 18, 2003
End Date: August 21, 2003
Sponsors: Nippon Institute of Technology, National Institute of Advanced Industrial Science and Technology, Glenn Research Center
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Keywords
polycrystalline diamond surface
Ar ion beam etching
flat surface
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IDRelationTitle20030068525Collected WorksProceedings of the Seventh Applied Diamond Conference/Third Frontier Carbon Technology Joint Conference (ADC/FCT 2003)
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