DLC Film Growth on the Surface of Monocrystalline Si and α -Al2O3 With The Usage of Ion Source

The technology of diamond-like carbon (DLC) film deposition, that allows to vary the composition and structure of the film giving an opportunity to modify the properties of the obtained samples, has been developed. In the present work the special gas-mixer was utilized, with the help of which the gas mixtures of C7H8 or C6H12, Ar and N2 were supplied between the anode and cathode of the ion source. By varying the electrical parameters of ion source and concentration of gas mixture and by shaping the plasma geometry, it is possible to modify the average kinetic energy of ions that have reached the substrate. This feature has permitted to grow DLC films on the surfaces of monocrystalline Si (c-Si), Al2O3 and other substrates over a 100 cm2 area with non-uniformity of characteristics less than 5%. The density p of the obtained films has been increased up to 2.5 g/cm3, and the microhardness HV - up to 3100 kgf/mm2. The DLC films are stable to chemically hostile environment, to radiation impacts, as well to thermal influences up to 400 °C. By altering the film deposition conditions it is possible to vary the electrical, optical and mechanical properties of DLC films in a wide range.