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Electron Emission and Raman Investigation of Hydrogenated Diamond Like Carbon Prepared by Pulsed Laser DepositionThe structure and the electron-field emission behavior of hydrogenated diamond-like carbon prepared by pulsed laser deposition are investigated. The diamond-like carbon films contain a mixture of sp3-bonds and sp2-bonds, possessing a large electron-field-emission current density [Je=368 mu A/square centimeter at 14V/micrometer], a low turn-on field [E(sub 0)=6V/micrometer] and a low effective work function[ phi e=0.0399eV]. The superior electron-field-emission properties of DLC films, as compared with those of diamonds, are ascribed to their nanostructured grains and surface groups such as C-H, which can produce large changes in electron affinity. From Raman spectra, the DLC films possess a diffused D-band resonance peak at 1350 per centimeter and a diffused G-band resonance peak near 1580 per centimeter. Breit-Wigner-Fano and Lorentzian line shape simulations are used to fit the spectra. After the emission, the Raman peak position is shifted due to the presence of nanostructure.
Document ID
20030068566
Acquisition Source
Glenn Research Center
Document Type
Abstract
Authors
Lin Yu
(China Scientific and Technical University Hofei, China)
Qi-Hong Wu
(China Scientific and Technical University Hofei, China)
Yuan Liao
(China Scientific and Technical University Hofei, China)
Qing-Xuan Yu
(China Scientific and Technical University Hofei, China)
Guan-Zhong Wang
(China Scientific and Technical University Hofei, China)
Rong-Chuan Fang
(China Scientific and Technical University Hofei, China)
Date Acquired
August 21, 2013
Publication Date
August 1, 2003
Publication Information
Publication: Proceedings of the Seventh Applied Diamond Conference/Third Frontier Carbon Technology Joint Conference
Publisher: National Aeronautics and Space Administration
Subject Category
Solid-State Physics
Report/Patent Number
NASA/CP-2003-212319
Meeting Information
Meeting: 3rd Frontier Carbon Technology (FCT) Joint Conference
Location: Tsukuba
Country: JP
Start Date: August 18, 2003
End Date: August 21, 2003
Sponsors: Nippon Institute of Technology, National Institute of Advanced Industrial Science and Technology, Glenn Research Center
Distribution Limits
Public
Copyright
Portions of document may include copyright protected material.

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