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The Novel Nucleation Process - An Update: A Method in the WorkingThe novel nucleation process (NNP) was introduced publicly 4 years ago, here in Tsukuba, at the ADC/FCT 1999 meeting and has been in the working since then. The main user was Dr. Jim Butler of the Naval Research Laboratory and recently it made its way to AFRL/WPAFB in Dayton Ohio. A few papers appeared already and more are to come where NNP facilitated the use of diamond thin films for various applications. In this paper we will present data that gives some scientific insight of this method. We will present data on the optical properties of the PT (pre treated) film (using Ellipsometric characterization) and EELS data for the material identification of that carbon film. We will show a range of applications that have been opened up by the NNP method. In particular we will show the use of diamond films as an active passivation layer for high voltage SiC Schottky diodes and the use of diamond as the insulation layer on top of a new family of metal matrix composite (MMC) materials for the packaging of high power devices. It will be obvious to the listener that NNP can be used by anyone involved in diamond CVD and especially to those that didn't think diamond could be used for their particular application. NNP has made diamond an easy material to grow and use in ways and means not accessible before NNP. The more people join in the use of NNP, and the more it will be used by many others for their application it will become more obvious that this is the way to grow diamond in most practical cases.
Document ID
20030068578
Acquisition Source
Glenn Research Center
Document Type
Abstract
Authors
Shlomo Rotter
(Universal Energy Systems, Inc. Wright-Patterson AFB, OH, United States)
Date Acquired
August 21, 2013
Publication Date
August 1, 2003
Publication Information
Publication: Proceedings of the Seventh Applied Diamond Conference/Third Frontier Carbon Technology Joint Conference
Publisher: National Aeronautics and Space Administration
Subject Category
Solid-State Physics
Report/Patent Number
NASA/CP-2003-212319
Meeting Information
Meeting: 3rd Frontier Carbon Technology (FCT) Joint Conference
Location: Tsukuba
Country: JP
Start Date: August 18, 2003
End Date: August 21, 2003
Sponsors: Nippon Institute of Technology, National Institute of Advanced Industrial Science and Technology, Glenn Research Center
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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