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Electrical Properties of Diamond PN-Junction Devicesn-Type diamond thin films were successfully formed by optimizing the growth condition of chemical vapor deposited diamond under phosphorus doping to obtain better crystalline perfection. The pn-junction made with stacking film of boron doped (p-type) and the phosphorus doped (n-type) layers has shown good rectification characteristics with the ratio of 1010 at +/- 10V. The diode characteristics and the behavior of pn-junction interface have been characterized by temperature dependent IV and CV measurements. By forward bias operation, the diode shows ultraviolet light emission at 235 nm that attributes free exciton luminescence. The diode also shows photoelectric response against ultraviolet light with the wavelength shorter than 225 nm that corresponds the bandgap of diamond. It is expected these characteristics of diamond pn-junction will be applied for the next generation opto-electrical devices.
Document ID
20030068612
Acquisition Source
Glenn Research Center
Document Type
Conference Paper
Authors
S Koizumi (National Institute for Materials Science Tsukuba, Japan)
M Katagiri (National Institute for Materials Science Tsukuba, Japan)
K Watanabe (National Institute for Materials Science Tsukuba, Japan)
H Kanda (National Institute for Materials Science Tsukuba, Japan)
Date Acquired
August 21, 2013
Publication Date
August 1, 2003
Publication Information
Publication: Proceedings of the Seventh Applied Diamond Conference/Third Frontier Carbon Technology Joint Conference
Publisher: National Aeronautics and Space Administration
Subject Category
Solid-State Physics
Report/Patent Number
NASA/CP-2003-212319
Meeting Information
Meeting: 3rd Frontier Carbon Technology (FCT) Joint Conference
Location: Tsukuba
Country: JP
Start Date: August 18, 2003
End Date: August 21, 2003
Sponsors: Nippon Institute of Technology, National Institute of Advanced Industrial Science and Technology, Glenn Research Center
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Keywords
n-type doping
pn-junction
electrical properties
light emission
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IDRelationTitle20030068525Collected WorksProceedings of the Seventh Applied Diamond Conference/Third Frontier Carbon Technology Joint Conference (ADC/FCT 2003)
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