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The Joining of Diamond to SiC by Energization Pulse Sintering MethodThe application of the energization pulse sintering (EPS) method is comparatively made in low temperature degree and a method of effective diffusion joining between solids in a diamond and the joining of various base materials by a short time. In this study, as materials which were easy to diffuse into diamond and which obtain a bonded SiC was joined with diamond. The junction planes of diamond/SiC confirmed diffusion couple adhesion with all joining conditions by scanning electron microscopy (SEM) and an energy dispersion system (EDS) result after the EPS method. These results showed that grain boundary diffusion and volume diffusion progressed with the volume transport mechanism.
Document ID
20030068618
Acquisition Source
Glenn Research Center
Document Type
Conference Paper
Authors
Jun Tanabe (Nippon Institute of Technology Shiraoka, Japan)
Date Acquired
August 21, 2013
Publication Date
August 1, 2003
Publication Information
Publication: Proceedings of the Seventh Applied Diamond Conference/Third Frontier Carbon Technology Joint Conference
Publisher: National Aeronautics and Space Administration
Subject Category
Solid-State Physics
Report/Patent Number
NASA/CP-2003-212319
Meeting Information
Meeting: 3rd Frontier Carbon Technology (FCT) Joint Conference
Location: Tsukuba
Country: JP
Start Date: August 18, 2003
End Date: August 21, 2003
Sponsors: Nippon Institute of Technology, National Institute of Advanced Industrial Science and Technology, Glenn Research Center
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Keywords
,non-ferrous metallurgy
ceramic
diffusion bonding
the energization pulse sintering
graphite
silicon
diamond
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IDRelationTitle20030068525Collected WorksProceedings of the Seventh Applied Diamond Conference/Third Frontier Carbon Technology Joint Conference (ADC/FCT 2003)
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