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Modeling the Deposition of Carbon and Nitrogen Atom/Ions on Wurtzite AIN (001) SurfaceThe bonding behaviors of carbon and nitrogen atom/ions to wurtzite AlN (001) surface have been investigated theoretically using ab initio HF method and the semiempirical AM1 molecular orbital theory. The reactivities of ions were found to be higher on the surface than their neutral atoms based on the frontier molecular orbital theory. The information of the potential energy surfaces calculated for carbon and nitrogen atoms on the AlN substrate suggested that the more ordered and stable Al-N bond can be achieved compared to the Al-C bond. The surface nitride of AlN substrate would improve the quality of the interfacial bonds and hence increase the adhesion between the diamond films and the substrate. Further, the use of the anion beams with an appropriate intensity in ion beam assisted deposition is expected to be more effective for the forming of good ordered interfacial bond than the ionic beam.
Document ID
20030068622
Acquisition Source
Glenn Research Center
Document Type
Abstract
Authors
R Q Zhang
(City University of Hong Kong Hong Kong, Hong Kong)
Dongju Zhang
(City University of Hong Kong Hong Kong, Hong Kong)
Date Acquired
August 21, 2013
Publication Date
August 1, 2003
Publication Information
Publication: Proceedings of the Seventh Applied Diamond Conference/Third Frontier Carbon Technology Joint Conference
Publisher: National Aeronautics and Space Administration
Subject Category
Solid-State Physics
Report/Patent Number
NASA/CP-2003-212319
Meeting Information
Meeting: 7th Applied Diamond Conference (ADC)
Location: Tsukuba
Country: JP
Start Date: August 18, 2003
End Date: August 21, 2003
Sponsors: Nippon Institute of Technology, National Institute of Advanced Industrial Science and Technology, Glenn Research Center
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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