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Synthesize of Nanostructure Diamond by Microwave Plasma Chemical Vapor Deposition With Biased Enhanced Nucleation and Hydrogen-Argon Plasma IrradiationThe hard (70GPa) and flat (average roughness of 10nm) nanostructure diamond films were synthesized by the combination of two-step substrate bias growth combined with irradiation of Ar-H2 plasma after deposition. Ar-H2 plasma irradiation has been confirmed to increase the hardness and decrease the roughness of films.
Document ID
20030068634
Acquisition Source
Glenn Research Center
Document Type
Conference Paper
Authors
Yasuhiko Hayashi (Nagoya Institute of Technology Nagoya, Japan)
Daisuke Mori (Nagoya Institute of Technology Nagoya, Japan)
Tetsuo Soga (Nagoya Institute of Technology Nagoya, Japan)
Takashi Jimbo (Nagoya Institute of Technology Nagoya, Japan)
Date Acquired
August 21, 2013
Publication Date
August 1, 2003
Publication Information
Publication: Proceedings of the Seventh Applied Diamond Conference/Third Frontier Carbon Technology Joint Conference
Publisher: National Aeronautics and Space Administration
Subject Category
Solid-State Physics
Report/Patent Number
NASA/CP-2003-212319
Meeting Information
Meeting: 7th Applied Diamond Conference (ADC)
Location: Tsukuba
Country: JP
Start Date: August 18, 2003
End Date: August 21, 2003
Sponsors: Nippon Institute of Technology, National Institute of Advanced Industrial Science and Technology, Glenn Research Center
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Keywords
Super hard flat
Hydrogen-argon plasma treatment
MPCVD
2-step substrate bias method
Nanostructure diamond
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IDRelationTitle20030068525Collected WorksProceedings of the Seventh Applied Diamond Conference/Third Frontier Carbon Technology Joint Conference (ADC/FCT 2003)
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