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Optical and Electric Properties of (111)-Oriented Diamond Homoepitaxial LayerWe have obtained high-quality (111)-oriented homoepitaxial layers with a low density of stacking faults. From the (111)-oriented layers, we observed well-resolved free-exciton transitions in cathodoluminescence at 13 K. In Raman scattering spectrum the line width of diamond-related peak was as low as 1.9 cm-1. A field-effect transistor with an 11 μm-long gate exhibited maximum normalized current of 24 mA/mm.
Document ID
20030068640
Acquisition Source
Glenn Research Center
Document Type
Conference Paper
Authors
M Kasu (Nippon Telegraph and Telephone Corporation Atsugi, Japan)
A Aleksov (Universität Ulm Ulm, Germany)
N Teofilov (Universität Ulm Ulm, Germany)
M Kubovic (Universität Ulm Ulm, Germany)
Y Taniyasu (Nippon Telegraph and Telephone Corporation Atsugi, Japan)
R Sauer (Universität Ulm Ulm, Germany)
E Kohn (Universität Ulm Ulm, Germany)
T Makimoto (Nippon Telegraph and Telephone Corporation Atsugi, Japan)
N Kobayashi (Nippon Telegraph and Telephone Corporation Atsugi, Japan)
Date Acquired
August 21, 2013
Publication Date
August 1, 2003
Publication Information
Publication: Proceedings of the Seventh Applied Diamond Conference/Third Frontier Carbon Technology Joint Conference
Publisher: National Aeronautics and Space Administration
Subject Category
Electronics and Electrical Engineering
Report/Patent Number
NASA/CP-2003-212319
Meeting Information
Meeting: 3rd Frontier Carbon Technology (FCT) Joint Conference
Location: Tsukuba
Country: JP
Start Date: August 18, 2003
End Date: August 21, 2003
Sponsors: Nippon Institute of Technology, National Institute of Advanced Industrial Science and Technology, Glenn Research Center
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Keywords
cathodoluminescence
CVD
homoepitaxial layer
Raman
FET
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IDRelationTitle20030068525Collected WorksProceedings of the Seventh Applied Diamond Conference/Third Frontier Carbon Technology Joint Conference (ADC/FCT 2003)
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