Deposition of Cubic Boron Nitride Films by Plasma Based Ion Implantation

Cubic Boron Nitride (cBN) film depositions were performed by a radio frequency (RF) bias sputtering with a plasma based ion implantation (PBII). Effects of PBII conditions, such as pulse bias voltage and duty ratio, on the nature of the deposited BN films were investigated systematically. It is revealed that the high voltage pulse bias is detrimental to cBN nucleation while cBN growth can proceed with the high voltage pulse biasing. Effects of PBII conditions were also investigated on the compressive stress and the adhesion strength of the deposited films using the two step depositions methods.