Hydrogen Implanted CVD Boron Doped Monocrystalline Diamond

Boron doped ([B]=5 x 1018/cm-3 monocrystalline [100] diamond films grown by chemical vapour deposition have been implanted with D+ and D2+ ions at room temperature, with an energy of 50 and 100 keV respectively, and the same atomic deuterium dose of 5 x 1016 cm-2. The implanted samples were submitted to successive thermal annealings under ultra-high vacuum. The deuterium profiles were analysed after deuterium implantation and after thermal annealing by Secondary Ion Mass Spectrometry (SIMS). The structural modifications of the buried implanted layer in the diamond film have been analysed by confocal micro-Raman scattering and by Scanning Electron Microscopy. In the case of a deuterium molecular ion implantation, a graphitised and amorphous buried layer may be detected after a 1050 °C thermal annealing. While no deuterium diffusion from the implantation buried layer is detected in the film, the SIMS deuterium profile exhibits a depletion at the implantation peak maximum. A blistering of the diamond layer occurs during a 1350 °C thermal annealing. This effect is not observed for D+ ionic implantation. In this case, some deuterium diffusion is observed in the film after a 1050 °C thermal annealing.