Diamond Field Effect Transistors for Microwave Devices and Biosensing Applications

Due to its extreme properties, diamond is expected to be the ultimate semiconductor device. However, its progress as an active device has been slow because there has been no doping technology developed to realize its high electrical conductance. We focused on a highly conductive p-type layer appearing on a hydrogen terminated diamond surface and developed surface channel field effect transistors (FETs). In this study, we demonstrate that this type of FET is applicable in high-frequency devices operating at high power and biosensors in electrolyte solution.