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The Characteristics of Photo-CVD SiO2 and Its Application in GaN MIS PhotodetectorSiO2 insulating layers were deposited onto GaN by photo chemical vapor deposition technique using deuterium (D2) lamp as the excitation source. Physical, chemical and electrical characteristics of the Al/SiO2/GaN metal-insulator-semiconductor (MIS) capacitors were investigated.
Document ID
20030068664
Acquisition Source
Glenn Research Center
Document Type
Conference Paper
Authors
Bohr-Ran Huang (National Yun-Lin University of Science and Technology Touliu, Taiwan, Province of China)
Tien-Kun Lin (National Yun-Lin University of Science and Technology Touliu, Taiwan, Province of China)
Yan-Kuin Su (National Cheng Kung University Tainan City, Taiwan)
Shoou-Jinn Chang (National Cheng Kung University Tainan City, Taiwan)
Yu-Zung Chiou (National Cheng Kung University Tainan City, Taiwan)
Date Acquired
August 21, 2013
Publication Date
August 1, 2003
Publication Information
Publication: Proceedings of the Seventh Applied Diamond Conference/Third Frontier Carbon Technology Joint Conference
Publisher: National Aeronautics and Space Administration
Subject Category
Solid-State Physics
Report/Patent Number
NASA/CP-2003-212319
Meeting Information
Meeting: 7th Applied Diamond Conference (ADC)
Location: Tsukuba
Country: JP
Start Date: August 18, 2003
End Date: August 21, 2003
Sponsors: Nippon Institute of Technology, National Institute of Advanced Industrial Science and Technology, Glenn Research Center
Funding Number(s)
CONTRACT_GRANT: NSC91-2623-7-006-006
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Keywords
photodetector
metal-insulator-semiconductor
SiO2
photo-CVD
GaN
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IDRelationTitle20030068525Collected WorksProceedings of the Seventh Applied Diamond Conference/Third Frontier Carbon Technology Joint Conference (ADC/FCT 2003)
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