Aurora PLD Growth of CaF2 Thin Film and Application to Improved CaF2/Diamond MIS Interface Formation

For the realization of a high quality diamond MIS device, we so far proposed to utilize CaF2 as the non-oxide gate insulator. CaF2 has been long prepared by the evaporation method. Recently, we introduced the pulsed laser deposition (PLD) method and fabricated diamond MIS diodes by PLD. To look at more improvement of the CaF2/diamond MIS interface, we started to study the aurora PLD (using the magnetic field) for CaF2 film formation in addition to the conventional PLD. Aurora method is characterized by the enhanced ionization and/or activation of ablated particles during transport from the target to substrate through interaction between the particles and applied magnetic fields and expected to obtain better quality of film. Plume emission spectroscopic measurements have revealed that the aurora PLD plume emission admirably increased more than 30 times higher than conventional one. Time-resolved plume image analyses have closely been done.