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Diamond-Like Carbon Films Deposited by Plasma-Based Ion Implantation MethodDiamond-like carbon (DLC) films were deposited on Si substrates and high-carbon chromium bearing steel (SUJ2) substrates by a plasma-based ion implantation method using an electron cyclotron resonance (ECR) plasma source with a mirror field and a power supply to apply negative high-voltage pulses and a negative DC bias to the substrate. CH4 gas was used as a carbon source. The plasma was produced from CH4 gas with an ECR power supplier. Before the deposition process of DLC films, carbon ions were implanted into the substrate surface by applying the high-voltage pulses of -10 kV for the formation of a carbon mixing layer. The DLC films with a smooth surface and a low friction coefficient could be formed by applying the negative high-voltage pulses of -2 kV to a substrate with a low duty ratio of 1%. The wear resistance of the DLC films was improved by the formation of the carbon mixing layer. The effect of the mixing layer formed at the interface between the DLC films and the substrate will be discussed in this presentation.
Document ID
20030068675
Acquisition Source
Glenn Research Center
Document Type
Abstract
Authors
Masatou Ishihara
(National Institute of Advanced Industrial Science and Technology Tsukuba, Japan)
Takako Nakamura
(National Institute of Advanced Industrial Science and Technology Tsukuba, Japan)
Akihiro Tanaka
(National Institute of Advanced Industrial Science and Technology Tsukuba, Japan)
Yoshinori Koga
(National Institute of Advanced Industrial Science and Technology Tsukuba, Japan)
Masahiro Suzuki
(Japan Fine Ceramics Center Nagoya, Japan)
Toshiya Watanabe
(Japan Fine Ceramics Center Nagoya, Japan)
Osamu Tsuda
(Japan Fine Ceramics Center Nagoya, Japan)
Date Acquired
August 21, 2013
Publication Date
August 1, 2003
Publication Information
Publication: Proceedings of the Seventh Applied Diamond Conference/Third Frontier Carbon Technology Joint Conference
Publisher: National Aeronautics and Space Administration
Subject Category
Solid-State Physics
Report/Patent Number
NASA/CP-2003-212319
Meeting Information
Meeting: 3rd Frontier Carbon Technology (FCT) Joint Conference
Location: Tsukuba
Country: JP
Start Date: August 18, 2003
End Date: August 21, 2003
Sponsors: Nippon Institute of Technology, National Institute of Advanced Industrial Science and Technology, Glenn Research Center
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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