Nano-Graphite Deposition by Electron Cyclotron Resonance Plasma Sputtering Method

The diamond-like carbon (DLC) films are of interest in connection with protective materials. Previously, we reported the deposition of DLC and carbon nitride films using an electron cyclotron resonance (ECR) plasma sputtering method. The deposited DLC film at low-pressure atmosphere showed low friction. In this paper, we investigated the deposition of carbon films under the condition of high plasma density and high-pressure atmosphere using ECR plasma sputtering. High density of plasma with low electron temperature was obtained in neighborhood of the substrate by the control of the magnetic flux density. The nanocrystal graphite in size about few nm was deposited on the Si (1 0 0) substrates by the sputtering of graphite target in argon atmosphere at room temperature. The nanocrystal graphite films deposited at the high plasma density (5.0 x 1011 cm-3 showed good tribological properties. New Raman peaks of G band were obtained. From the analysis of XPS, the nanocrystal graphite gives C1s binding energy of 284.8 eV. The electrical resistivity of the films was 10–2 Ω cm.