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Novel Diamond Cone Arrays: Single Crystalline and NanocrystallineWe have developed a new method for fabricating uniform arrays of single crystal diamond and nanodiamond cones with a very high aspect ratio over large areas using a microwave plasma chemical vapor deposition system. The fabrication of diamond nanocones consists of: 1) deposition of diamond films which serve as base materials and 2) subsequent bias-assisted reactive ion etching in hydrogen plasma. In this two-step process [001].oriented diamond films are converted to very sharp diamond cones with an apical angle of 28 deg. and a tip radius as small as 5 nm. Each cone was identified by TEM as a single crystalline diamond with its [001] axis perpendicular to the substrate surface. Alternatively, when nanodiamond films are used as starting materials for reactive etching by hydrogen plasma, arrays of cones composed of nanodiamond are fabricated. The nanodiamond cones show exceptional electron field emission properties, particularly emission durability and stability compared to single crystalline cones.
Document ID
20030068686
Acquisition Source
Glenn Research Center
Document Type
Abstract
Authors
Y Wu
(Hong Kong University Hong Kong)
W J Zhang
(Hong Kong University Hong Kong)
C Y Chan
(Hong Kong University Hong Kong)
X M Meng
(Hong Kong University Hong Kong)
W K Wong
(Hong Kong University Hong Kong)
I Bello
(Hong Kong University Hong Kong)
Y Lifshitz
(Hong Kong University Hong Kong)
S T Lee
(Hong Kong University Hong Kong)
Date Acquired
August 21, 2013
Publication Date
August 1, 2003
Publication Information
Publication: Proceedings of the Seventh Applied Diamond Conference/Third Frontier Carbon Technology Joint Conference
Publisher: National Aeronautics and Space Administration
Subject Category
Solid-State Physics
Report/Patent Number
NASA/CP-2003-212319
Meeting Information
Meeting: 3rd Frontier Carbon Technology (FCT) Joint Conference
Location: Tsukuba
Country: JP
Start Date: August 18, 2003
End Date: August 21, 2003
Sponsors: Nippon Institute of Technology, National Institute of Advanced Industrial Science and Technology, Glenn Research Center
Distribution Limits
Public
Copyright
Portions of document may include copyright protected material.

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