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Scaling and Single Event Effects (SEE) SensitivityThis paper begins by discussing the potential for scaling down transistors and other components to fit more of them on chips in order to increasing computer processing speed. It also addresses technical challenges to further scaling. Components have been scaled down enough to allow single particles to have an effect, known as a Single Event Effect (SEE). This paper explores the relationship between scaling and the following SEEs: Single Event Upsets (SEU) on DRAMs and SRAMs, Latch-up, Snap-back, Single Event Burnout (SEB), Single Event Gate Rupture (SEGR), and Ion-induced soft breakdown (SBD).
Document ID
20030105559
Acquisition Source
Goddard Space Flight Center
Document Type
Preprint (Draft being sent to journal)
Authors
Oldham, Timothy R.
(NASA Goddard Space Flight Center Greenbelt, MD, United States)
Date Acquired
September 7, 2013
Publication Date
January 1, 2003
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: IEEE Nuclear and Space Radiation Effects Conference
Location: Monterey, CA
Country: United States
Start Date: July 21, 2003
Sponsors: Institute of Electrical and Electronics Engineers
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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