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Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor TransportThe objective of the project is to determine the relative contributions of gravity-driven fluid flows to the compositional distribution, incorporation of impurities and defects, and deviation from stoichiometry observed in the crystals grown by vapor transport as results of buoyancy-driven convection and growth interface fluctuations caused by irregular fluid-flows. ZnSe and related ternary compounds, such as ZnSeS and ZnSeTe, were grown by vapor transport technique with real time in situ non-invasive monitoring techniques. The grown crystals were characterized extensively to correlate the grown crystal properties with the growth conditions. Significant effects of gravity vector orientation on the growth crystal morphology and point defect distribution were observed.
Document ID
20040073497
Document Type
Other
Date Acquired
August 21, 2013
Publication Date
December 1, 2003
Publication Information
Publication: Biological and Physical Space Research Laboratory 2002 Science Review
Subject Category
Solid-State Physics
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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IDRelationTitle20040073490Analytic PrimaryBiological and Physical Space Research Laboratory 2002 Science Review