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High Beginning-of-Life Efficiency p/n InP Solar CellsWe have achieved a new record efficiency of 17.6%, (AM0) for a p/n InP homo-epitaxy solar cell. In addition, we have eliminated a previously observed photo-degradation of cell performance, which was due to losses in J(sub sc). Cells soaked in AM0 spectrum at one-sun intensity for an hour showed no significant change in cell performance. We have discovered carrier passivation effects when using Zn as the p-type dopant in the OMVPE growth of InP and have found a method to avoid the unexpected effects which result from typical operation of OMVPE cell growth.
Document ID
20040142243
Acquisition Source
Glenn Research Center
Document Type
Conference Paper
Authors
Hoffman, Richard W., Jr. (Essential Research, Inc. Cleveland, OH, United States)
Fatemi, Navid S. (Essential Research, Inc. Cleveland, OH, United States)
Weizer, Victor G. (Essential Research, Inc. Cleveland, OH, United States)
Jenkins, Phillip P. (Essential Research, Inc. Cleveland, OH, United States)
Ringel, Steven A. (Ohio State Univ. Columbus, OH, United States)
Scheiman, David A. (NYMA, Inc. Cleveland, OH, United States)
Wilt, David M. (NASA Lewis Research Center Cleveland, OH, United States)
Brinker, David J. (NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
September 7, 2013
Publication Date
June 1, 2004
Publication Information
Publication: Proceedings of the 15th Space Photovoltaic Research and Technology Conference
Subject Category
Energy Production And Conversion
Funding Number(s)
CONTRACT_GRANT: NAS3-27677
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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IDRelationTitle20040142233Collected WorksProceedings of the 15th Space Photovoltaic Research and Technology Conference
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