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Angular Effects in Proton-Induced Single-Event Upsets in Silicon-on-Sapphire and Silicon-on-Insulator DevicesWe present new data in the ongoing effort to bound the effect of proton angle of incidence on the single-event upset (SEU) rate in silicon-on-sapphire (SOS) and silicon-on-insulator (SOI) devices.
Document ID
20040171664
Acquisition Source
Goddard Space Flight Center
Document Type
Preprint (Draft being sent to journal)
Authors
Kniffin, S. D. (Orbital Sciences Corp. Dulles, VA, United States)
Sanders, A. B. (NASA Goddard Space Flight Center Greenbelt, MD, United States)
Reed, R. A. (NASA Goddard Space Flight Center Greenbelt, MD, United States)
LaBel, K. A. (NASA Goddard Space Flight Center Greenbelt, MD, United States)
Liu, M. S. (Honeywell, Inc. Plymouth, MN, United States)
Tabbert, C. J. (Peregrine Semiconductor Corp. Albuquerque, NM, United States)
Swonger, J. W. (Peregrine Semiconductor Corp. Melbourne, FL, United States)
McCabe, J. F. (Honeywell, Inc. Clearwater, FL, United States)
Gardner, G. A. (Honeywell, Inc. Clearwater, FL, United States)
Lintz, J. (Honeywell, Inc. Clearwater, FL, United States)
Date Acquired
September 7, 2013
Publication Date
January 1, 2004
Subject Category
Solid-State Physics
Meeting Information
Meeting: 2004 IEEE Nuclear and Space Radiation Effects Conference
Location: Atlanta, GA
Country: United States
Start Date: July 19, 2004
End Date: July 23, 2004
Sponsors: Institute of Electrical and Electronics Engineers
Funding Number(s)
CONTRACT_GRANT: DTRA-IACRO-04-40641
CONTRACT_GRANT: DTRA-IACRO-03-40351
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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