NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Collections About News Help Login

Press Enter or click the Search button to begin your search.

Back to Results
1 GHz, 200 C, SiC MESFET Clapp OscillatorA SiC Clapp oscillator frabricated on an alumina substrate with chip capacitors and spiral inductors is designed for high temperature operation at 1 gigahertz. The oscillator operated from 30 to 200 C with an output power of 21.8 dBm at 1 gigahertz and 200 C. The efficiency at 200 C is 15 percent. The frequency variation over the temperature range is less than 0.5 percent.
Document ID
20050185107
Acquisition Source
Glenn Research Center
Document Type
Preprint (Draft being sent to journal)
Authors
Ponchak, George E. (NASA Glenn Research Center Cleveland, OH, United States)
Schwartz, Zachary D. (Analex Corp. Cleveland, OH, United States)
Date Acquired
September 7, 2013
Publication Date
January 1, 2005
Subject Category
Electronics And Electrical Engineering
Funding Number(s)
WBS: WBS 22-714-70-64
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

Related Records

There are no records associated with this record.
No Preview Available