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Nanoelectronic 3-D (NEMO 3-D) simulation of multimillion atom quantum dot systemsThe convergence of electron and hole ground states of a dome-shaped InGaAs quantum dot as a function of the size of the surrounding buffer is explored.
Document ID
20060029844
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
hdl:2014/9618
Authors
Oyafuso, F.
Klimeck, G.
Bowen, R. C.
Boykin, T. B.
Date Acquired
August 23, 2013
Publication Date
September 4, 2002
Distribution Limits
Public
Copyright
Other
Keywords
quantum devices nanoelectronics quantum dot alloy broadening boundary condition

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