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High Performance MMICs with Submillimeter Wave InP-based HEMTsThis paper presents some recently developed MMICs based on a 0.1 meu gate-length InAlAs/InGaAs/InP HEMT process with an fmax above 600 GHz.
Document ID
20060032675
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
hdl:2014/14340
Authors
Weinreb, S.
Pobanz, C.
Matloubian, M.
Radisic, V.
Raghavan, G.
Case, M.
Micovic, M.
Hu, M.
Nguyen, C.
Samoska, L.
Date Acquired
August 23, 2013
Publication Date
May 14, 2000
Distribution Limits
Public
Copyright
Other
Keywords
millimeter-wave power amplifiers InP HEMTS

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