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Modification of the Surface Band-Bending of a Silicon CCD For Low-Energy Electron DetectionIn this paper, we will discuss the modification of the band bending near the CCD surface by low-temperature MBE and report the applicatio of delta-doped CCDs to low-energy electron detection.
Document ID
20060035164
Acquisition Source
Jet Propulsion Laboratory
Document Type
Preprint (Draft being sent to journal)
External Source(s)
hdl:2014/22039
Authors
Nikzad, Shouleh
Smith, Aimee L.
Yu, Q.
Elliot, S. T.
Date Acquired
August 23, 2013
Publication Date
December 2, 1996
Distribution Limits
Public
Copyright
Other
Keywords
Silicon Electron Detection

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