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Total Ionizing Dose Effects on 64Mb 3.3V DRAMs
64Mb 3.3V CMOS DRAMs from two different manufacturers were tested for total dose. Retention time, power supply current, and functionality were used to characterize device response.
Document ID
20060035405
Acquisition Source
Jet Propulsion Laboratory
Document Type
Preprint (Draft being sent to journal)
External Source(s)
hdl:2014/22407
Authors
Johnston, A. H.
Lee, C. I.
Date Acquired
August 23, 2013
Publication Date
July 21, 1997
Distribution Limits
Public
Copyright
Other
Keywords
Ionizing Dose Effects Samsung Mitsubishi
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